RLS tradeoff vs. quantum yield of high PAG EUV resists

Abstract

The effect of higher film quantum yields (FQYs) on the resolution, line-edge roughness, and sensitivity (RLS) tradeoff was evaluated for extreme ultraviolet (EUV, 13.5 nm) photoresists. We determined the FQY of increasingly high levels of an iodonium photoacid generator (PAG) using two acid detection methods. First, base titration methods were used to determine C-parameters for acid generation, and second, an acid-sensitive dye (Coumarin-6) was used to determine the amount of acid generated and ultimately, to determine absorbance and FQYs for both acid detection methods. The RLS performance of photoresists containing increasing levels of PAG up to ultrahigh loadings (5-40 wt% PAG) was evaluated. RLS was characterized using two methods: • K_LUP resist performance •Z-Parameter (Z = LER²*Esize*Resolution³)