Electron transport in ZnMgO/ZnO heterostructures

Abstract

We numerically calculate the wave function of two-dimensional electron gas (2DEG) for use in 2DEG transport theory and study the electron transport in ZnMgO/ZnO heterostructures. For strongly confined 2DEG, the temperature dependence of the electron mobility is satisfactorily explained using 2DEG transport theory. The interface roughness and ionized impurity scatterings play important roles in the electron transport at low and moderate temperatures. At room temperatures polar optical phonon scattering is the most important scattering mechanism. For heterostructures having two parallel conduction paths in the 2DEG at the ZnMgO/ZnO interface and in the ZnO thick layer, the electron transport is contributed by the two paths. We calculate the mobility for the respective conduction paths, and then combine the two mobility components to fit the experimental data. The theoretical calculations are in good agreement with the experimental data.