12.2: Large‐Area Poly‐Si on Glass by UV Scan Heating

Abstract

Abstract The amorphous silicon (a‐Si)over 300 × 350 mm 2 could be completely crystallized by using silicide mediated crystallization (SMC)of a‐Si by means of UV scan heating. A‐Si having a 2.0 × 10 13 atoms/cm 2 Ni area density was crystallized in 10 minutes without having amorphous phase inside and the grain size was ∼20 μm. The field effect mobilities and threshold voltages of the p‐channel poly‐Si TFTs were 35 ∼ 40 cm 2 /Vs and 0.6 ∼ 0.7 V/dec, respectively, over 300 × 350 mm 2 .