Six-terminal MOSFET's: modeling and applications in highly linear, electronically tunable resistors

Abstract

The electrical properties of a six-terminal MOSFET are studied and a strong-inversion model is derived. Due to its special structure, the six-terminal MOSFET can be operated as a highly-linear, electronically-tunable resistor. This is managed by applying proper voltages at the terminals of the structure, achieving channel uniformity independent of applied signals. Measurements on fabricated test devices yield distortion levels of -90 dB for 1 V/sub p-p/ signals.