High On/Off Ratio in Enhancement-Mode Al_xGa_1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact

Abstract

An excellent on/off ratio of drain–source current (IDS) density over 6 orders of magnitude by changing the gate voltage (VG) from 3 to 0 V was confirmed in p-GaN/u-AlxGa1-xN/u-GaN junction heterostructure field-effect transistors. These devices show an extremely low leakage IDS density of as low as 15.5 nA/mm at VDS and VG of 10 and 0 V. On resistance is as low as 2.65 mΩ·cm2 at VG = 3.0 V.