Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2009 · 13 citations · 17 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMaterials PhysicsSpectroscopyDefects In Electronic MaterialsInfrared SpectroscopyInorganic SpectroscopyRadiation ChemistryRadiation Damage In MaterialsRadiation SpectroscopyAbsorption Band AssignmentCzochralski Crystal GrowthCzochralski GrowthDefect Evolution Under IrradiationInfrared Absorption SpectroscopySpectral Absorption BandsVacancy ComplexesVibrational Absorption Bands
Fourier transform infrared absorption spectroscopy was used to study the evolution of multivacancy-oxygen-related defects in the temperature range 200-300 °C in Czochralski-grown Si samples irradiated with MeV electrons or neutrons. A clear correlation between disappearance of the divacancy (V2) related absorption band at 2767 cm-1 and appearance of two absorption bands positioned at 833.4 and 842.4 cm-1 at 20 K (at 825.7 and 839.1 cm-1 at room temperature) has been found. Both these two emerging bands have previously been assigned to a divacancy-oxygen defect formed via interaction of mobile V2 with interstitial oxygen (Oi) atoms. The present study shows, however, that the two bands arise from different defects since the ratio of their intensities depends on the type of irradiation. The 842.4 cm-1 band is much more pronounced in neutron irradiated samples and we argue that it is related to a trivacancy-oxygen defect (V3O) formed via interaction of mobile V3 with Oi atoms or/and interaction of mobile V2 with VO defects.
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J. W. Corbett, G. D. Watkins, R. M. Chrenko et al. · Physical Review · 1961 · 361 citations
1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the Divacancy
L. J. Cheng, J. C. Corelli, J. W. Corbett et al. · Physical Review · 1966 · 328 citations