New Oxygen Infrared Bands in Annealed Irradiated Silicon

Abstract

Infrared and electron-spin-resonance measurements on the recovery of silicon irradiated with 1.5-MeV electrons are presented. In the infrared measurements the disappearance of the previously reported 829-${\mathrm{cm}}^{\ensuremath{-}1}$ ($12\ensuremath{\mu}$) oxygen vibration band is followed, and the appearance and subsequent disappearance of a succession of new infrared bands are observed. The major new bands are at 887, 904, 968, and 1000 ${\mathrm{cm}}^{\ensuremath{-}1}$, although others are also found. Tentative defect models are proposed to account for these recovery features.