MOCVD of Strontium Tantalate Thin Films Using Novel Bimetallic Alkoxide Precursors

Abstract

Thin films of the perovskite strontium bismuth tantalate (SBT) have a large potential application as capacitors in non-ferroelectric computer memories. The MOCVD of SBT has, however, been severely restricted by lack of suitable precursors. This paper reports on the use of novel alkoxide precursors containing both strontium and tantalum (see cover) and shows that with liquid injection MOCVD, crystalline strontium tantalate can be formed on annealing the deposited layer. This is a promising approach for the MOCVD of SBT.