Influence of lattice mismatch on photoluminescence from liquid phase epitaxial grown InGaP on GaAs substrates

Energy band-gap shift with elastic strain in Ga<i>x</i>In1−<i>x</i>P epitaxial layers on (001) GaAs substrates

Hiromitsu Asai, Kunishige Oe · Journal of Applied Physics · 1983 · 367 citations

Natural Sciences, Materials Science, Physics +17

Indium Phosphide

E. W. Williams, W. Elder, M.G. Astles et al. · Journal of The Electrochemical Society · 1973 · 153 citations

Engineering, Electrical Engineering, Materials Science +13

The effect of elastic strain on energy band gap and lattice parameter in III-V compounds

G.H. Olsen, C. J. Nuese, R. T. Smith · Journal of Applied Physics · 1978 · 109 citations

Engineering, Materials Science, Physics +17

Liquid phase epitaxial growth of GaxIn1−xP

G. B. Stringfellow, P. F. Lindquist, R. Burmeister · Journal of Electronic Materials · 1972 · 84 citations

Natural Sciences, Materials Engineering, Materials Science +10

Liquid phase epitaxial growth and photoluminescence characterization of laser-quality (100) In1−xGaxP

W.R. Hitchens, N. Holonyak, M.H. Lee et al. · Journal of Crystal Growth · 1974 · 57 citations

Engineering, Materials Engineering, Materials Science +14