Applied Physics Letters · 1976 · 126 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceRecombinationSemiconductor DevicesSemiconductor MaterialsDefects In Electronic MaterialsSemiconductor DefectsSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsAnnealing EffectsBand GapDeep-level DefectsDefect AnnealingDefect Levels In SemiconductorsElectron Beam Irradiation EffectsLattice DefectsThermal Annealing
Capacitance spectroscopy studies of lattice defects intentionally introduced into GaP diodes by 1-MeV electron irradiation have shown a very large enhancement in the defect annealing rate under conditions of e-h recombination. Six deep levels are observed and all exhibit recombination enhanced annealing. Four of the levels anneal athermally during recombination having the same rate at 100 K as at 300 K. Comparisons of the thermal annealing activation energy and the energy released during hole capture indicate that the observed athermal enhancement is a natural consequence of the wide GaP band gap.
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