2013 · 11 citations · 1 references
EngineeringElectrical EngineeringAntennasMicroelectronicsSemiconductor DevicesAntenna DesignCmos Circuit DesignHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsRadio-frequency Integrated CircuitsCmos Radio-frequency CircuitsInsertion LossInsertion Loss ReductionIntegrated AntennasMicrowave SwitchesRadio-frequency Integrated Circuit DesignRf Cmos DesignRf Switches
This paper presents the results of a compact wire-bond SP9T antenna switch that was designed as technology demonstrator for a 2.5 V CMOS, 250 fs Ron-Coff thin-film SOI process. Through “layout-driven” circuit design, a small die size of 1.52 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> was achieved for a fully integrated switch die containing RF-section, I/O pads, ESD, decoder, level shifters and dual frequency charge pump to generate negative vss. The dual frequency charge pump was a requirement to achieve a fast start-up time of 10 μs and switch rise times of 3 μs. A low insertion loss of 0.42 dB for cellular low-band at 915 MHz and 0.55 dB for cellular high-band at 1910 MHz, harmonic powers better -76 dBc over battery and Band I/V IMD3 of -110 dBm were achieved. All ports show a high ESD tolerance of 2 kV HBM.
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