Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy

Abstract

X-ray photoemission spectroscopy has been used to measure the valence band offset ΔEv for the AlN/GaN (0001) heterojunction interface. The heterojunction samples were grown by reactive molecular beam epitaxy on 6H–SiC (0001) substrates. A nested interface band alignment with ΔEv=1.36±0.07 eV is obtained (ΔEc/ΔEv=52/48).