Deep-level defects and diffusion length measurements in low energy proton-irradiated GaAs

Nonradiative capture and recombination by multiphonon emission in GaAs and GaP

C. H. Henry, D. V. Lang · Physical review. B, Solid state · 1977 · 1.2K citations

Natural Sciences, Materials Science, Physics +16

Fast capacitance transient appartus: Application to ZnO and O centers in GaP <i>p-n</i> junctions

D. V. Lang · Journal of Applied Physics · 1974 · 604 citations

Engineering, Materials Engineering, Materials Science +17

A study of deep levels in GaAs by capacitance spectroscopy

D. V. Lang, R. A. Logan · Journal of Electronic Materials · 1975 · 344 citations

Engineering, Electrical Engineering, Physics +14

Study of electron traps in <i>n</i>-GaAs grown by molecular beam epitaxy

D. V. Lang, A. Y. Cho, A. C. Gossard et al. · Journal of Applied Physics · 1976 · 203 citations

Engineering, Electrical Engineering, Materials Science +17

Deep Level Impurities in Semiconductors

H. G. Grimmeiss · Annual Review of Materials Science · 1977 · 195 citations

Natural Sciences, Materials Engineering, Materials Science +15