Properties of metal/polyacetylene Schottky barriers

Abstract

Rectifying barriers of undoped and lightly doped trans-(CH)x films with low work function metals have been investigated. I-V and C-V measurements were used to explore the junction properties. The junction characteristics were found to be Schottky-like in the large sense accompanied by significant differences in detail. Using C-V measurements to determine the carrier concentration, we found the carrier mobility to be concentration dependent.