100 h II-VI blue-green laser diode

Abstract

By reducing the dark-spot density to <3 × 103 cm-2, device lifetime exceeding 100 h has been obtained for a ZnCdSe/ZnSSe/ZnMgSSe single quantum well separate-confinement heterostructure laser diode (LD) under room temperature continuous-wave operation with a constant light output power of 1 mW. The threshold current density is 533 A/cm2 and the lasing wavelength is 514.7 nm. Considering the dark-spot density, we have concluded that the failure of this LD is not caused by degradation from macroscopic defects such as stacking faults, but by recombination enhanced defect reaction.