A comparative study on the electrical characteristics of Au/n-Si structures with anatase and rutile phase TiO2 interfacial insulator layer

The physics of semiconductor devices

H. L. Grubin · IEEE Journal of Quantum Electronics · 1979 · 2.8K citations

Semiconductors, Semiconductor Devices, Electrical Engineering +5

Extraction of Schottky diode parameters from forward current-voltage characteristics

S. K. Cheung, N.W. Cheung · Applied Physics Letters · 1986 · 2.7K citations

Device Modeling, Semiconductor Technology, Electrical Engineering +11

Electrical and optical properties of TiO2 anatase thin films

Hongyu Tang, K. Prasad, R. Sanjinés et al. · Journal of Applied Physics · 1994 · 1.8K citations

Optical Materials, Engineering, Optical Absorption +16

Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

H.C. Card, E. H. Rhoderick · Journal of Physics D Applied Physics · 1971 · 1.8K citations

Engineering, Charge Transport, Semiconductor Device +16

Barrier inhomogeneities at Schottky contacts

J.H. Werner, H. Güttler · Journal of Applied Physics · 1991 · 1.6K citations

Engineering, Capacitance Barriers, Charge Transport +18