Umut Aydemir

The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer

İlke Taşçıoğlu, Umut Aydemir, Ş. Altındal · Journal of Applied Physics · 2010 · 113 citations

Engineering, Semiconductor Device, Semiconductors +17

A detailed study on current–voltage characteristics of Au/n-GaAs in wide temperature range

E. Özavcı, S. Demirezen, Umut Aydemir et al. · Sensors and Actuators A Physical · 2013 · 80 citations

Semiconductor Technology, Electrical Engineering, Engineering +7

Effect of series resistance and interface states on the I–V, C–V and G/ω–V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature

S. Demirezen, Zekayi Sönmez, Umut Aydemir et al. · Current Applied Physics · 2011 · 80 citations

Materials Science, Room Temperature, Electrical Engineering +10

Forward and reverse bias current–voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer

Muharrem Gökçen, Ş. Altındal, Mehmet Can Karaman et al. · Physica B Condensed Matter · 2011 · 55 citations · Full text

Semiconductor Technology, Electrical Engineering, Engineering +6

Analysis of the forward and reverse bias <i>I-V</i> characteristics on Au/PVA:Zn/n-Si Schottky barrier diodes in the wide temperature range

İlke Taşçıoğlu, Umut Aydemir, Ş. Altındal et al. · Journal of Applied Physics · 2011 · 54 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11