Self-consistent optical parameters of intrinsic silicon at 300K including temperature coefficients

Martin A. Green

Solar Energy Materials and Solar Cells

PhotonicsOptical MaterialsEngineeringPhysicsOptical Properties +10

Probing momentum distributions in magnetic tunnel junctions via hot-electron decay

R. Jansen, T. Banerjee, B. G. Park, +1

Applied Physics Letters

Tunnel Momentum DistributionEngineeringVacuum DeviceAl2o3 BarriersMagnetoresistance +14

Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si-SiO2 interface

Armin G. Aberle, Stefan W. Glunz, Wilhelm Warta

Journal of Applied Physics

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPhysics +13

Spatially resolved series resistance of silicon solar cells obtained from luminescence imaging

Thorsten Trupke, E. Pink, R.A. Bardos, +1

Applied Physics Letters

Electrical EngineeringPhotoluminescenceEngineeringMicroscopyOptical Properties +11

Crystalline silicon cell performance at low light intensities

N.H. Reich, Wilfried van Sark, E.A. Alsema, +4

Solar Energy Materials and Solar Cells

PhotonicsEngineeringLow Light IntensitiesApplied PhysicsSemiconductor Device Fabrication +3

Recombination at textured silicon surfaces passivated with silicon dioxide

Keith R. McIntosh, Luke Patrick Johnson

Journal of Applied Physics

Optical MaterialsEngineeringPhotovoltaic DevicesOptoelectronic DevicesSilicon On Insulator +19

Fast series resistance imaging for silicon solar cells using electroluminescence

Jonas Haunschild, Markus Glatthaar, Martin Käsemann, +2

physica status solidi (RRL) - Rapid Research Letters

Electroluminescence ImagesEngineeringLocal VoltagePhotovoltaic DevicesPlasmon-enhanced Photovoltaics +14

Nondestructive local analysis of current–voltage characteristics of solar cells by lock-in thermography

Otwin Breitenstein

Solar Energy Materials and Solar Cells

Electrical EngineeringEngineeringApplied PhysicsLock-in ThermographyNondestructive Local Analysis +2

Evaluation of diffusion lengths and surface recombination velocities from electron beam induced current scans

C. Donolato

Applied Physics Letters

Current ScansDiffusion LengthsWide-bandgap SemiconductorEngineeringElectron-beam Lithography +16

Generation III high efficiency lower cost technology: Transition to full scale manufacturing

David D. Smith, P.J. Cousins, Asnat Masad, +20

EngineeringEnergy EfficiencyEnergy ConversionPhotovoltaic SystemPhotovoltaics +14