Xerographic time of flight experiment for the determination of drift mobility in high resistivity semiconductors

Abstract

Drift mobility in high resistivity semiconductors can be determined from xerographic time of flight (XTOF) techniques whose principles are different from the well known Haynes-Shockley experiment. A practical and inexpensive XTOF apparatus which can be utilized in investigating high resistivity semiconductors is described in detail. Some examples of XTOF transient current waveforms in amorphous selenium-based photoreceptors and method of analysis are presented.