High-efficiency GaAs solar cells grown by molecular-beam epitaxy

M. R. Melloch, S. P. Tobin, T.B. Stellwag, C. Bajgar, A. Keshavarzi, Mark Lundstrom, Keith Emery

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 33 citations · 0 references

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Abstract

Previously, solar cells fabricated from molecular-beam epitaxually (MBE)-grown material have been inferior in performance to those fabricated from metalorganic chemical vapor deposited (MOCVD) material. We have obtained 1-sun air mass (AM) 1.5 efficiencies of 23.8% for 0.25 cm2 GaAs solar cells fabricated on MBE-grown material. This is the first solar cell fabricated on MBE material which is of comparable performance to solar cells fabricated on MOCVD material. Details of the MBE system preparation and film growth procedure along with a detailed evaluation of the solar cells will be presented.