Separation of plasma implantation of oxygen to form silicon on insulator

Abstract

Separation by plasma implantation of oxygen (SPIMOX) is an economical method for silicon-on-insulator (SOI) wafer fabrication. This process employs the plasma immersion ion implantation (PIII) for the implantation of oxygen ions. The implantation rate, which is independent of the wafer size, is considerably higher than that of conventional implantation. The simpler implanter set-up is lower in cost and easier to maintain. The feasibility of SPIMOX has been demonstrated with successful fabrication of SOI structures implementing this process. The operational phase space on implantation condition, oxygen dose, and annealing requirement are identified. Secondary ion mass spectrometry analysis and cross-sectional transmission electron microscopy micrographs of the SPIMOX sample showed continuous buried oxide under single crystal overlayer with sharp silicon/oxide interfaces.