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Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes
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1980
Year
EngineeringZener BreakdownEpitaxial LayersDonor ConcentrationOptical PropertiesSuperconductivityMolecular Beam EpitaxyCompound SemiconductorMaterials SciencePhotonicsElectrical EngineeringInp SubstratePhysicsMicrostructureDonor Concentration DependenceApplied PhysicsCondensed Matter PhysicsAlloy PhaseOptoelectronics
Distinction between an avalanche and a zener breakdown has been made theoretically for the In1-xGaxAs1-yPy alloy lattice-matched to InP substrate. Experimental results of temperature dependence and donor concentration dependence of the breakdown voltages for In0.89Ga0.11As0.26P0.74 and In0.53Ga0.47As APDs are in good agreement with the theoretical result. Based on both theory and experiment, the critical donor concentration ND+, in which an avalanche and a zener mechanism exchange places, has been established for the In1-xGaxAs1-yPy alloys. It has been found that ND+'s lie near 6×1014 cm-3 for In0.53Ga0.47As, 9×1015 cm-3 for In0.72Ga0.28As0.62P0.38 and 2×1017 cm-3 for InP, respectively.