Electrochemical and Solid-State Letters · 2007 · 13 citations · 21 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesOptoelectronic DevicesSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesWide Band Gap SemiconductorsAnnealingBarrier HeightsGallium Nitride Light-emitting DiodesLight-emitting DevicesOhmic MaterialsOptoelectronic PropertiesScanning Transmission Electron MicroscopySchottky Barrier Contacts
We have investigated the Ag (1 nm)indium tin oxide (ITO) (200 nm) contacts by scanning transmission electron microscopy (STEM), Auger electron spectroscopy (AES), and X-ray photoemission spectroscopy (XPS) to understand its ohmic mechanism. The Ag/ITO contacts exhibit ohmic behaviors, when annealed at 400-600°C. The effective Schottky barrier heights depend on the annealing temperatures. STEM and AES results reveal the formation of Ag nanodots (5-35 nm across) and Ga-Ag solid solution. Based on the STEM, AES, and XPS results, the ohmic contact formation is described in terms of the formation of the Ga-Ag solid solution and the inhomogeneous interfaces with nanodots. © 2007 The Electrochemical Society.
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