Japanese Journal of Applied Physics · 1995 · 26 citations · 28 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistrySemiconductor MaterialsChemical Vapor DepositionCrystal GrowthEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor HeterostructuresSemiconductor PhysicsHeteroepitaxial GrowthHeteroepitaxyLattice MismatchLattice StrainLow-pressure Chemical Vapor DepositionMetalorganic Chemical Vapor DepositionOptical PropertiesPhotoluminescence
Heteroepitaxial growth of CuGaS 2 was studied by low-pressure metalorganic chemical vapor deposition using normal-tripropylgallium as a new Ga precursor, combined with cyclopentadienylcoppertriethylphosphine and ditertiarybutylsulfide. Structural and optical properties were characterized in detail. The epilayer showed the c [001]-oriented growth on both GaAs(001) and GaP(001) substrates. The lattice parameter c of the epilayers was smaller than that of the bulk single crystal. Magnitude of the residual lattice strain for CuGaS 2 /GaP(001) was found to be larger than that for CuGaS 2 /GaAs(001), even though the lattice mismatch for the former was smaller than that for the latter. The strain is considered to be introduced during cooling after the growth. A photoluminescence peak at 2.493 eV (8 K) was assigned to a free exciton emission, because the peak energy agreed with A-exciton energy obtained from photoreflectance spectra.
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