Epitaxial Growth of CuGaS₂ by Metalorganic Chemical Vapor Deposition

Abstract

CuGaS 2 epitaxial layers have been grown on GaAs and GaP substrates by metalorganic chemical vapor deposition for the first time, using cyclopentadienyl(triethylphosphine)copper(I), triethylgallium and hydrogen sulfide (or diethylsulfide) as source materials. The surface morphology and growth orientation are studied. The grown layers have shown green photoluminescence at low temperature.