Lateral electric-field effects on excitonic photoemissions in InGaAs quantum disks

Abstract

Electric-field effects on excitons in zero-dimensional InGaAs quantum disks have been examined at low temperature. Photoluminescence from a single isolated disk was measured under the application of a lateral electric field by using the microphotoluminescence technique. A redshift of sharp excitonic luminescence and a decrease in its intensity under increasing electric field were observed. These were found to distinctively depend on the lateral extent of the disks: these were much more prominent in the larger disk. The exciton luminescence was found to be highly polarized along the direction of the field in the larger disk.