Impact ionization breakdown of n-type epitaxial GaAs at liquid helium temperatures

Electrical Conduction in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Germanium at Low Temperatures

Seymour H. Koenig, Rodney D. Brown, Walter E. Schillinger · Physical Review · 1962 · 193 citations

Natural Sciences, Materials Science, Physics +16

The preparation of high purity gallium arsenide by vapour phase epitaxial growth

J.R. Knight, D. Effer, P. R. Evans · Solid-State Electronics · 1965 · 146 citations

Natural Sciences, Materials Engineering, Materials Science +12

Electrical Properties of n‐Type Epitaxial Gallium Arsenide

D.V. Eddolls · physica status solidi (b) · 1966 · 39 citations

Natural Sciences, Materials Science, Physics +17

Shallow donor levels and high mobility in epitaxial gallium arsenide

J.F. Whitaker, D.E. Bolger · Solid State Communications · 1966 · 33 citations

Natural Sciences, Materials Science, Physics +12

Impact ionization in zinc-doped germanium at low temperatures

Adam Zylbersztejn · Journal of Physics and Chemistry of Solids · 1962 · 29 citations

Natural Sciences, Materials Engineering, Materials Science +9