physica status solidi (b) · 2006 · 24 citations · 12 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsSemiconductor MaterialsLuminescent MaterialsOptical Properties Of SemiconductorsQuantum DotsSemiconductor Device MaterialsSemiconductor NanomaterialsSemiconductor PhysicsMetalorganic Vapor Phase EpitaxyPhotoluminescencePhotoluminescence SpectroscopyQuantum Dot MaterialsQuantum Dot PhotophysicsSemiconductor Quantum Dots
Abstract We present photoluminescence measurements on single InGaN quantum dots grown by metalorganic vapor phase epitaxy. The spatially and spectrally resolved luminescence properties of the single quantum dots were measured using low‐temperature micro‐photoluminescence spectroscopy. The observed sharp emission lines of the quantum dots were characterized by excitation density dependent measurements. They can easily be observed at temperatures up to 150 K. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Single-photon emission of CdSe quantum dots at temperatures up to 200 K
K. Sebald, Peter Michler, T. Passow et al. · Applied Physics Letters · 2002 · 192 citations