Publication | Closed Access

Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

Semiconductor TechnologyElectrical EngineeringEngineeringOxide ElectronicsApplied PhysicsPassivation Layer ImprovementsGallium OxideBottom GateThin Film Process TechnologyThin FilmsThin-film TransistorsSemiconductor Device