Observation of interfacial atomic steps during silicon oxidation

Probing the transition layer at the SiO2-Si interface using core level photoemission

G. Hollinger, F. J. Himpsel · Applied Physics Letters · 1984 · 442 citations

Natural Sciences, Chemistry, Materials Science +17

Direct resolution of surface atomic steps by transmission electron microscopy

D. Cherns · Philosophical magazine · 1974 · 297 citations

Natural Sciences, Materials Science, Physics +17

The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

P. J. Grunthaner, M. H. Hecht, F. J. Grunthaner et al. · Journal of Applied Physics · 1987 · 290 citations

Natural Sciences, Materials Engineering, Materials Science +13

Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown Oxide

D. E. Aspnes, J. B. Theeten · Journal of The Electrochemical Society · 1980 · 246 citations

Natural Sciences, Materials Engineering, Materials Science +17

The Si–SiO2 interface: Correlation of atomic structure and electrical properties

Peter Hahn, M. Henzler · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1984 · 161 citations

Engineering, Materials Science, Physics +17