Electronics Letters · 1981 · 22 citations · 0 references
EngineeringElectrical EngineeringOptoelectronicsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsLaser PhysicsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsWide Band Gap SemiconductorsDifferential Quantum EfficiencyHeterostructure DevicesHeterostructure LasersLow-threshold Current LasersQuantum EfficiencySemiconductor Laser FabricationThreshold Current Reduction
Buried heterostructure (BH) AlGaAs lasers were fabricated on Cr-doped semi-insulating substrates. Low threshold current (8 mA/μm stripe width for cavity length of 300 μm), a high differential quantum efficiency (55%), and stable transverse mode operation were realised.