Oxidation of silicon by a low-energy ion beam: Experiment and model

Abstract

The self-limiting oxidation of silicon by a low-energy ion beam (40–120 eV) is described by an implantation-sputtering model. The thin oxide (40–50 Å) is grown primarily by a surface implantation process which leads to a logarithmic increase of oxide thickness with dose in the absence of sputtering. At higher energies (100 eV), the sputtering of the growing film leads to net self-limiting growth. The model, which does not include adjustable parameters, is used to describe the dose evolution of the oxide growth as a function of beam energy. The implantation-sputtering model is found to be in excellent agreement with experimental observations.