Improvement of brightness with Al2O3 passivation layers on the surface of InGaN/GaN-based light-emitting diode chips

Light Emitting Diodes

E. Fred Schubert · Kirk-Othmer Encyclopedia of Chemical Technology · 2006 · 373 citations

Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

M. Asif Khan, M. S. Shur, John N. Kuznia et al. · Applied Physics Letters · 1995 · 272 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +8

Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1997 · 242 citations

Engineering, Laser Science, Laser Applications +20

High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors

Özgür Aktaş, Z. Fan, S. Noor Mohammad et al. · Applied Physics Letters · 1996 · 219 citations

Wide-bandgap Semiconductor, Electrical Engineering, High Temperature Characteristics +9

The Silicon Nitride Film Formed by ECR-CVD for GaN-Based LED Passivation

Ko-Min Chang, C.C. Lang, Chih‐Chia Cheng · physica status solidi (a) · 2001 · 18 citations

Engineering, Nanoelectronics, Light-emitting Diodes +16