Physical review. B, Condensed matter · 1984 · 36 citations · 16 references
Math XmlnsElectrical EngineeringOptical MaterialsMi Mathvariant=EngineeringPhysicsNanoelectronicsOxide ElectronicsApplied PhysicsCondensed Matter PhysicsBistable DefectDefect FormationStimulated CapacitanceSemiconductor MaterialFe-doped InpCharge Carrier TransportCharge TransportCapacitance Transient Spectroscopy
We report the observation of a defect in Fe-doped InP which can exist in either of two configurations, for the same charge state. Each configuration exhibits distinct electronic and optical properties. Thermally stimulated capacitance, capacitance transient spectroscopy, and photocapacitance were used to study the properties of the defect in each configuration, and the kinetics of the reversible transformations between configurations. The unique properties of the defect are discussed.
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Recombination enhanced defect reactions
Lionel C. Kimerling · Solid-State Electronics · 1978 · 421 citations
Negative-U Properties for Point Defects in Silicon
G. D. Watkins, John R. Troxell · Physical Review Letters · 1980 · 326 citations