Calculation and experimental determination of the structure transfer accuracy in deep x-ray lithography

Abstract

Deep x-ray lithography with synchrotron radiation is the key microfabrication process in the LIGA technology. Micro-components with a height of some up to several mm can be manufactured with sub- precision. The pattern transfer accuracy is governed by technological constraints like thermal deformation of the mask as well as by various physical effects, e.g. diffraction, emission of photo- and Auger electrons, fluorescence radiation, radiation scattering and divergence of the synchrotron radiation beam. A computer program has been developed to investigate the significance of these effects to the dose distribution in the resist material, which in turn determines the lateral structure resolution and the quality of the resist structures.