Three‐Band Model Applied to Narrow‐Gap HgCdTe

Abstract

Abstract Hg 1– x Cd x Te, with x = 0.15 is a semimetal at low temperature (4.2 K) and becomes a narrow‐gap semiconductor at higher ones (77 K). Its transport properties are measured at different temperatures, magnetic fields, and hydrostatic pressures. Based on the measured data, an analytical three‐band model is developed to calculate the concentrations and mobilities of the resulting two types of electrons and one type of holes. The existence of the slow electrons are related to the presence of acceptor states in the conduction band, as it is already elucidated in the case of zerogap HgTe. The concordance of the calculated transport properties, based on this model, with the measured ones supports the subsistence of three types of carriers in the narrow‐gap HgCdTe.