C. Fau

Three‐Band Model Applied to Narrow‐Gap HgCdTe

C. Fau, J. F. Dame, Maria Deus Carvalho et al. · physica status solidi (b) · 1984 · 22 citations

Natural Sciences, Materials Science, Physics +16

Pb_1−xGd_<i>x</i>Te a New Semimagnetic Semiconductor with Rare Earths

M. Avérous, B. A. Lombos, C. Fau et al. · physica status solidi (b) · 1985 · 17 citations

Natural Sciences, Materials Science, Physics +17

Recombination processes in 3 to 5 μm HgCdTe

J. Calas, J. Allègre, C. Fau · physica status solidi (b) · 1981 · 15 citations

Natural Sciences, Physics, Electronic Materials +12

Pb/p-PbSe junction: An investigation of current-voltage and capacitance-voltage measurements

O. Dos Santos, V. Mathet, C. Fau et al. · Solid-State Electronics · 1996 · 14 citations

Engineering, Electrical Engineering, Materials Science +14

Magneto transport measurements on semi magnetic semiconductor Hg1−xFexTe

Sherif Abdelmaksoud, C. Fau, J. Calas et al. · Solid State Communications · 1985 · 11 citations

Natural Sciences, Materials Engineering, Materials Science +14