Growth defects in GaN films on 6H–SiC substrates

Abstract

Lattice defects in GaN epilayers grown on 6H–SiC(0001) by metalorganic vapor phase epitaxy (MOVPE) have been characterized by transmission electron microscopy (TEM). The predominant defects in the film were threading dislocations and half-loops with Burgers vectors 1/3〈112̄0〉, [0001], and 1/3〈112̄3〉. Planar faults were also observed in the film that are thought to be inversion domain boundaries (IDBs).