High resistivity layers of GaAs grown by liquid phase epitaxy

Physics of Semiconductor Devices

Geoffrey Pridham · Electronics and Power · 1970 · 4K citations

Engineering, Electrical Engineering, Physics +12

Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

Simon M. Sze, J.C. Irvin · Solid-State Electronics · 1968 · 687 citations

Natural Sciences, Materials Science, Physics +12

Physics of III–V compounds

William Dunlap · Solid-State Electronics · 1965 · 321 citations

Natural Sciences, Materials Science, Physics +12

Ionized Impurity Density in <i>n</i>-Type GaAs

C. M. Wolfe, G. E. Stillman, J. O. Dimmock · Journal of Applied Physics · 1970 · 121 citations

Engineering, Electrical Engineering, Materials Science +17

Investigation of the Recombination and Trapping Processes of Photoinjected Carriers in Semi-Insulating Cr-Doped GaAs Using PME and PC Methods

S. S. Li, C. I. Huang · Journal of Applied Physics · 1972 · 45 citations

Engineering, Electrical Engineering, Materials Science +16