physica status solidi (a) · 2007 · 10 citations · 13 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureMaterials CharacterizationOpticsCrystal GrowthCrystallographyDefect CharacterizationSemiconductor DefectsX-ray CrystallographyX-ray DiffractionDefect StructuresDiffuse ScatteringDislocation LoopsPrecipitatesSilicon Crystal GrowthSingle Crystal AnalysisX-ray Diffuse Scattering
Abstract Analytical expressions for coherent and diffuse scattering intensities with account for imperfections in all the crystals of double‐ and triple‐crystal diffractometers (DCD and TCD) have been derived from the generalized dynamical theory of X‐ray scattering in real single crystals which contain microdefects of various types. The analysis of TCD and DCD profiles measured from Czochralski‐grown silicon single crystal with oxygen precipitates and dislocation loops has been carried out. Characteristics of defect structures in sample and monochromator have been determined by using the combined DCD+TCD method. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Oxygen precipitation in silicon
A. Borghesi, B. Pivac, A. Sassella et al. · Journal of Applied Physics · 1995 · 488 citations
Natural Sciences, Materials Engineering, Materials Science +11
Oxygen precipitation in silicon
W. Patrick, E. E. Hearn, W. A. Westdorp et al. · Journal of Applied Physics · 1979 · 442 citations
Natural Sciences, Materials Engineering, Materials Science +11