Applied Physics Letters · 2006 · 39 citations · 28 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingIii-v SemiconductorsIon ImplantationMetal-semiconductor ContactsOxide SemiconductorsSemiconductor Device MaterialsCurrent-voltage CharacterizationCurrent-voltage RelationshipElectroluminescenceElectron Impact IonizationIon Implantation EffectsIonizationSeries ResistanceZinc Oxides
N + ion implantation at moderate doses (1013–1014cm−2) into nominally undoped (n∼1017cm−3) bulk single-crystal ZnO substrates followed by annealing in the range 600–950°C was used to fabricate diodes that show visible luminescence at 300K and band-edge electroluminescence at 120K (∼390nm) under forward bias conditions. The current-voltage behavior of the diodes are characteristic of metal-insulator-semiconductor devices and suggest the implantation creates a more resistive region in the n-ZnO in which holes are created by impact ionization during biasing, similar to the case of electroluminescence in ZnO varistors. The series resistance is only 25Ω due to the use of the conducting ZnO substrate.
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RETRACTED: Recent progress in processing and properties of ZnO
S. J. Pearton, D. P. Norton, K. Ip et al. · Progress in Materials Science · 2004 · 1.7K citations
Natural Sciences, Materials Engineering, Materials Science +8
Theory of conduction in ZnO varistors
G. D. Mahan, Lionel M. Levinson, H. R. Philipp · Journal of Applied Physics · 1979 · 480 citations · Full text