Applied Physics Letters · 2007 · 159 citations · 17 references
Large AreaShort Wavelength OpticOptical MaterialsEngineeringElectron-beam LithographyOptoelectronic DevicesAluminum Nanowire GridsSemiconductor LithographyBeam LithographyMaterials FabricationNanometrologyNanolithography MethodNanophotonicsMaterials ScienceElectrical EngineeringNanotechnologyNanomanufacturingDeep UltravioletPhotonic DevicePlasmonicsMicrofabricationMetrology ApplicationsApplied PhysicsNanofabricationOptoelectronics
Large-area, 100mm in diameter, aluminum nanowire grids with 40nm line/78nm space were fabricated with full-wafer immersion interference lithography. The aluminum nanowire grids with a 59nm half-pitch work as a highly efficient optical polarizer for deep ultraviolet wavelength down to ∼250nm. In addition, an extremely high contrast from 10 000:1 to 50 000:1 was achieved across the whole visible and near-infrared wavelength range, along with good transmittance (85%–90%). The broadband large-area high-performance polarizer operating down to deep ultraviolet wavelength opens up applications including semiconductor lithography and metrology applications.
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M. G. Moharam, T. K. Gaylord, Drew A. Pommet et al. · Journal of the Optical Society of America A · 1995 · 1.6K citations