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Fabrication of a 50 nm half-pitch wire grid polarizer using nanoimprint lithography
303
Citations
6
References
2005
Year
EngineeringElectron-beam LithographyBeam LithographyMaterials FabricationPrinted ElectronicsSidewall PatterningNanolithographyAluminium GratingsNanolithography MethodNanophotonicsMaterials ScienceElectrical EngineeringNanomanufacturingFabrication TechniqueLaser Interference Lithography3D PrintingNanoimprint LithographyFlexible ElectronicsMicrofabricationApplied PhysicsNanofabrication
We report the fabrication of a 50 nm half-pitch wire grid polarizer with high performance using nanoimprint lithography. The device is a form of aluminium gratings on a glass substrate whose size of 5.5 cm × 5.5 cm is compatible with a microdisplay panel. A stamp with a pitch of 100 nm was fabricated on a silicon substrate using laser interference lithography and sidewall patterning. The imprint and the aluminium etching processes are optimized to realize uniform aluminium gratings with aspect ratio of 4. The polarization extinction ratio of the fabricated device is over 2000, with transmission of 85% at a wavelength of 450 nm, which is the highest value ever reported. This work demonstrates that nanoimprint lithography is a unique cost-effective solution for nanopatterning requirements in consumer electronics components.
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