Electronics Letters · 1999 · 27 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesSemiconductor Device MaterialsSemiconductor HeterostructuresWide Band Gap SemiconductorsGaas Microwave Integrated CircuitsGallium Nitride Microwave Integrated CircuitsHeterostructure DevicesHeterostructure MaterialsPower Output
Record performances in terms of output power (9.5 dBm) and maximum efficiency (12.3%) have been demonstrated for a 250 GHz heterostructure barrier varactor tripler. Such good results are explained by the use of highly nonlinear InGaAs/InAlAs/AlAs planar integrated diodes, which are seen to have numerous advantages over their GaAs-based counterparts.
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Planar multi-stack quantum barrier varactortripler evaluation at W-band
A. Rahal, E. Boch, Chris Rogers et al. · Electronics Letters · 1995 · 14 citations