Determination of distributed fixed charge in CVD-oxide and its virtual elimination by use of HCl

Physics of Semiconductor Devices

Geoffrey Pridham · Electronics and Power · 1970 · 4K citations

Semiconductors, Semiconductor Devices, Electrical Engineering +6

Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon

B. E. Deal, Michael C. Sklar, Andrew S. Grove et al. · Journal of The Electrochemical Society · 1967 · 706 citations

Materials Science, Surface‐state Charge, Electrical Engineering +14

Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures

Andrew S. Grove, B. E. Deal, E. H. Snow et al. · Solid-State Electronics · 1965 · 416 citations

Materials Science, Engineering, Oxide Electronics +6

The Current Understanding of Charges in the Thermally Oxidized Silicon Structure

Bruce E. Deal · Journal of The Electrochemical Society · 1974 · 360 citations · Full text

Materials Engineering, Electrical Engineering, Engineering +14

An Auger analysis of the SiO2-Si interface

J. S. Johannessen, W. E. Spicer, Y. E. Strausser · Journal of Applied Physics · 1976 · 260 citations

Materials Science, Electrical Engineering, Engineering +13