2006 · 90 citations · 5 references
EngineeringElectrical EngineeringAnalog ElectronicsLow-power DesignMicroelectronicsCmos Circuit DesignHigh-frequency Semiconductor DevicesLow-noise Circuit DesignNoise Reduction DesignRadio-frequency Integrated CircuitsResonant CircuitsCmos OscillatorsDielectric LossesDielectric ResonatorsHigh-frequency OperationLow-phase-noise OscillatorsPhase NoisePhase Noise AnalysisRf Cmos Design
An on-chip resonator with artificial dielectric in place of the LC tank yields reduced metal/substrate losses, higher resonator Q and alambda/4 length reduction of 4.7 times. The VCO uses 90nm CMOS, with 0.015mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> area, consumes 1.9mW and has a measured phase noise of -100dBc/Hz at 1MHz offset. The FOM is -193dBc/Hz
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Foundation of rf CMOS and SiGe BiCMOS technologies
J. Dunn, D. Ahlgren, Douglas Coolbaugh et al. · IBM Journal of Research and Development · 2003 · 101 citations
A 60 GHz InGaP/GaAs HBT push-push MMIC VCO
Jeong‐Geun Kim, Donghyun Baek, Sanghoon Jeon et al. · 2003 · 15 citations