High-performance circuit design for the RET-enabled 65-nm technology node

Abstract

The implementation of alternating phase shifted mask lithography for the poly-conductor level of IBM's leading edge 65nm microprocessor is described. Very broad and 'resolution-enhancement-technology generic' design rules, referred to as radical design restrictions, are demonstrated to be key enablers of alternating phase shifted mask design. The benefit of these radical design restrictions over conventional design rules and other alternating phase shifted mask design approaches is detailed for key aspects of the design flow.