Time-dependent dielectric breakdown of SiO2 films in a wide electric field range

Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon

D. J. DiMaria, E. Cartier, D. Arnold · Journal of Applied Physics · 1993 · 716 citations

Engineering, Materials Engineering, Materials Science +17

Electrical breakdown in thin gate and tunneling oxides

Ih-Chin Chen, S. Holland, Chenming Hu · IEEE Transactions on Electron Devices · 1985 · 484 citations

Engineering, Electrical Engineering, Physics +17

Modeling and characterization of gate oxide reliability

J.C. Lee, Ih-Chin Chen, Hu Chenming · IEEE Transactions on Electron Devices · 1988 · 370 citations

Engineering, Electrical Engineering, Materials Science +17

Dielectric Breakdown in Silicon Dioxide Films on Silicon

C. M. Osburn, D. W. Ormond · Journal of The Electrochemical Society · 1972 · 161 citations

Engineering, Electrical Engineering, Materials Science +17

A quantitative physical model for time-dependent breakdown in SiO2

I.C. Chen, S. Holland, C. -Y. Hut · 1985 · 139 citations

Engineering, Materials Engineering, Materials Science +11