Microwave and Optical Technology Letters · 2001 · 16 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesDevice ModelingHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesNoiseNoise In Electronic DevicesMicrowave ModelingMicrowave TransistorsNoise AnalysisNoise CharacteristicsNoise In Field-effect TransistorsNoise Parameter ExtractionNoise ParametersTransistor Noise
This paper presents a new procedure for the noise modeling of microwave transistors based on the wave approach. The expressions for MESFET and HEMT noise-wave parameters in terms of three equivalent temperatures—gate, drain, and correlation temperature—are derived. Noise parameter characteristics obtained by the proposed modeling procedure have excellent agreement with measurements for a typical MESFET. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 28: 426–430, 2001.
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