Japanese Journal of Applied Physics · 1982 · 11 citations · 12 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsSemiconductor MaterialsAmorphous MaterialsFatigueSilicon MaterialsAmorphous SiliconAnnealingFatigue BehaviorHydrogenated Amorphous SiliconPhotoluminescencePhotoluminescence Spectroscopy
It was found that fatigue in photoluminescence of hydrogenated amorphous silicon could be photo-annealed with infrared light. This photo-annealing effect supports the three state model of the fatigue which consists of initial, intermediate and final fatigued state. Different fatigue behavior at two different temperatures (77 K and 294 K) is also interpreted by the model.
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